Abstract
A detailed model is developed to study the influence of the sample RC product on capture cross section measurements and to enable the determination of absolute values of capture cross sections from such measurements. The model is tested on the deep double donor of selenium in silicon. It is shown that the value of the RC product should be at least a factor of ten smaller than the time constant of the capture cross section in order to avoid appreciable errors in the determination of capture cross sections. Such errors remain easily undetected in an ordinary analysis of capture cross section measurements.
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