The influence of the chemical and physical component of the plasma etching of the surface of gallium arsenide on the etching rate in the chloride plasma of the combined discharge

Abstract

In this paper, experimental studies were carried out on the formation of a microrelief on the surface of gallium arsenide substrates. The surface was modified by the method of plasma etching. Etching was carried out in a medium of chloride gas. In the work, the etching rates of the surface of gallium arsenide depend on the power of the inductively coupled plasma source. The etching rate of gallium arsenide was 28.2 nm / min, 24.9 nm / min, 27.8 nm / min, at inductively coupled plasma power values of 200 W, 400 W and 600 W. In the same work, the patterns of etching rate of gallium arsenide surface Taking into account the capacity of the capacitive plasma and the voltage of the shift. The etching rate of gallium arsenide was 516.7 nm / min, 559.5 nm / min, 603.3 nm / min, with capacitive plasma power values of 10 W, 35 W and 70 W, respectively. These results can be used to form a modified surface for the subsequent epitaxial growth of quantum dots based on gallium arsenide.