Abstract
Abstract The etch rates in darkness of n- and p-type GaP (111) and ( I I I ) crystal faces in alkaline Fe(CN)3−6 solutions were measured, using a flow cell set-up. The etching process was found to consist of two compensating partial currents, corresponding to the anodic dissolution of GaP and to the cathodic reduction of Fe(CN)3−6via hole injection respectively. The latter reaction was extensively studied by means of voltammetric techniques. The hole injection rate was found to depend on the crystal orientation, on the pH of the solution and on the polarization of the electrode. This dependence was explained by differences in position of the valence band edge, as observed in impedance measurements. The difference of injection kinetics resulted in a difference in morphology between both polar faces after etching.
Published Version
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