Abstract
The resistance of the contact used in spreading resistance measurements on silicon has been measured as a function of temperature. The results can be described by assuming a potential barrier in series with the true spreading resistance and it is shown that thermal emission over this barrier and (at low resistivities) tunnelling through the barrier influence significantly the contact resistance. The observed relationship between contact resistance and resistivity is explained by this model when the pressure effect on the silicon energy gap is taken into account.
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