Abstract
The incorporation factors of arsenic (SAs) for As2 and As4 molecular flux during GaAs MBE were detected. It has been determined that SAs does not depend on the arsenic molecular forms in incident flux. The correlation between SAs and reconstruction state of GaAs(001) grown surface have been shown. The maximal values of SAs for GaAs(001)-(4×2) and - (2×4) surfaces are characterized by 0.42 and 0.72, respectively. The dependences of arsenic incorporation rate and SAs during GaAs MBE versus substrate temperature (Ts) and incident flux density were obtained
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
