Abstract
Defects originate in N-channel MOSFETs by exposing them to high-energy ions and 60Co gamma radiation separately to different radiation doses. The electrical variations in MOSFETs are characterized systematically before and after the influence of radiation on MOSFETs. The impact of 60Co gamma radiation on threshold voltage (V TH) and mobility (µ) characteristics of MOSFETs is more than the impact of high energy ions on MOSFETs. The annealing of electrical characteristics in the irradiated MOSFETs is studied systematically by isothermal and isochronal annealing techniques. The isochronal annealing technique is more preferable due to its high recovery rate than the isothermal annealing technique.
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