The influence of radiation damage on the sputtering yield of silicon

Abstract

The influence of radiation damage created during implantation, on the sputtering yield of single crystal silicon is presented. Samples implanted with Ar, Ne, N 2, C, As ions in the dose range 10 14–10 17/cm 2 were then implanted with trace amounts of 76As radioactive isotope. From a comparison of the integral depth distributions of 76As, the change of sputtering yield over implanted layer was obtained. The experiment shows that the ion etching rate is significantly affected by the implantation process, especially for the samples irradiated with higher doses.