Abstract
The effect of barrier growth temperatures on blue InGaN (2 nm)/GaN (12 nm) multiplequantum wells was studied with samples grown by metallorganic chemical vapourdeposition. It was found that InGaN active layers composed of InGaN quasi-dots of2 ± 0.2 nm in diameter, changing from their homogeneous nature, could beobtained by elevating the barrier growth temperature from 700 to800 °C based on the results of energy-filtered high resolution transmission electron microscopy.These dots may have formed during the ramping process by in situ annealing. Strongpiezoelectric field, ‘S-shape-like’ carrier transition and high internal quantum efficiency of71.3% were observed in the sample with a higher barrier growth temperature closelyrelated to the dot formation. Furthermore, the forward voltage and the lightoutput power at 20 mA of light emitting diodes from the sample with dots were0.3 V lower and 11% higher than that from the homogeneous multiple quantumwells.
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