The influence of preamorphization on the properties of shallow p + n-junctions in silicon radiation detectors

Abstract

Low resistivity p +-contacts of silicon radiation detectors can be prepared by boron implantation into a preamorphized surface layer, produced by a germanium implantation. Already at low annealing temperature T ≤ 600°C the solid phase epitaxy of the amorphous layer leads to high electrical boron activation and a low sheet resistivity R s ≤ 300 Ω/□ . It is shown that for the essential parameters of radiation detectors no significant disadvantages are obtained by preamorphization, if the p + n-junction is located outside the region of end-of-range defects. An interesting application may be the fabrication of implanted detectors without metal contacts.