Abstract
A model of the formation of donor centers introduced by a combined implantation of Er+ and O+ ions into silicon with subsequent thermal annealing is developed. These centers are multiparticle erbium-oxygen complexes ErOn with n≥4. The competing process of formation of electrically inactive oxygen clusters is taken into account. The model makes it possible to describe the dependence of the activation coefficient for the donor centers on the implantation dose of oxygen ions and, also, the effects of the oxygen ion implantation and annealing temperature on the concentration profiles of the donor centers.
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