Abstract
We presented the results of the calculations of optical and recombination losses in photoconductor layers on the basis of heterojunctions with copper oxide absorbing layers (CuO, Cu2O) and zinc magnesium oxide (ZMO) window layer. Aluminum-doped zinc oxide (AZO) and indium tin oxide (ITO) were used as the solar cell frontal contacts. The spectral dependences of the transmission coefficient of these devices were determined. The reflection of light from the boundary of two contacting materials and light absorption in the auxiliary layers of photoconductors were taken into account. The influence of optical and recombination losses on the internal and external quantum yield, short circuit current density, and maximum efficiency of solar cells are investigated. It has been established that the highest efficiency (η = 19.12%) is shown by the device with the structure of AZO/ZMO/CuO.
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