Improvement in performance of CZTSSe solar cell by using cadmium free buffer layers

Abstract

Cadmium Sulphide(CdS) has been the most preferred n-type buffer layer and Indium Tin Oxide(ITO) is the popular window layer in kesterite solar cells. Cadmium being toxic and Indium being a rare earth element, continuous efforts are being made to replace these materials from kesterite solar cells structure. In this work, ZnS, ZnSe, and Zn_0.8Sn_0.2O are considered as possible alternatives for CdS. Similarly, Aluminium doped Zinc Oxide(AZO) is considered as an alternative for ITO. Firstly, a cell model with CdS and ITO (Mo/CZTSSe/CdS/ZnO/ITO) is developed using SCAPS-1D software. To optimise the performance parameters namely open-circuit voltage(<i>Voc</i>), short-circuit current density(<i>Jsc</i>), fill factor(<i>FF</i>), and the power conversion efficiency (<i>PCE</i>) for irradiation under normal working conditions, thickness and the composition ratio of the absorber layer(CZTSSe) are evaluated through numerical simulations. PCE of 14.51% is achieved for a 40% of Sulphur content and 2 um thickness of Cu₂ZnSn(S_xSe_1-x)4 when CdS is used as the buffer layer. For the same structure, replacing ITO with AZO results in a PCE of 14.62%. Use of Cadmium-free buffer layers ZnS, ZnSe, and Zn_0.82Sn_0.18O with ITO as window layer result in PCE of 13.98%, 14.28%, and 14.53%, respectively. For the Cadmium-free buffer layers, an improvement in PCE is achieved when ITO is replaced by AZO, with the highest being 14.62% for Zn_0.82Sn_0.18O. This can be attributed to the smaller conduction band offset, which reduces the recombination of photogenerated carriers and improves the carrier transport in the solar cell. The above results indicate that the Zn_0.8Sn_0.2O and AZO can be potential candidates for the buffer layer and window layer, respectively, for high-performance and cheap kesterite solar cells.