Abstract
ABSTRACTNitrogen related absorption bands of the IR spectra are used to determine the content of nitrogen and N—H bonds in a—Si56 Ge44 films. A preferential attachment of nitrogen to silicon is observed. Nitrogen incorporation enhances the normalized photoconductivity to 5 · 107 cm2/V at maximum. This is related to N—H complexes acting as donors. A correlation between optical gap and single oscillator energy is reported.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
