Abstract
Undoped and Ni-doped barium strontium titanate (BST) thin films have prepared by sol-gel method on a platinum-coated silicon substrate. The structure and dielectric properties of Ni-doped BST thin films were investigated. Results show that grain size of the BST thin films decrease with the increase of Ni content. Dielectric constant and dielectric loss also decrease. As the content of Ni-doped reaches 10 mol%, the dielectric constant, dielectric loss, tunability and FOM are 230.25, 0.015, 30.8% and 20.53, respectively. Ni-doped BST thin films were suitable for tunable microwave devices.
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