Abstract
Non-stoichiometric hydrogenated amorphous silicon carbide thin films (α-SiC:H) were deposited by plasma-enhanced chemical vapor deposition. The samples were subsequently post-annealed at 750, 900, 1050, and 1200°C, respectively. Photoluminescence (PL) was measured by fluorescence spectrometer at room temperature. Infrared absorption was carried out by Fourier transform infrared absorption. Chemical compositions were analyzed by X-ray photoelectron spectroscopy. The synthesis of silicon quantum dots (Si-QDs) was characterized by Raman scattering spectroscopy and directly by high-resolution transmission electron microscope. PL measurements revealed that there were complicatedly shifted sub-bands upon the thermal annealing temperature increase. The behaviors of these shifted sub-bands showed converse trends as that of the local SiC bonding densities. A possible influence for the PL by the evolvement of the local SiC bonding densities and the synthesis of Si-QDs in the α-SiC:H samples is supposed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
