Abstract
The early stages of nanocrystallization in amorphous Fe73.8Si13B9.1Cu1Nb3.1 ribbons and microwires were compared in terms of their internal stress effects. The microstructure was investigated by the X-ray diffraction method. Classical expressions of crystal nucleation and growth were modified for microwires while accounting for the internal stress distribution, in order to justify the XRD data. It was assumed that, due to the strong compressive stresses on the surface part and tensile stresses on the central part, crystallization on the surface part of the microwire proceeded faster than in the central part. The results revealed more rapid nanocrystallization in microwires compared to that in ribbons. During the initial period of annealing, the compressive surface stress of a microwire caused the formation of a predominantly crystallized surface layer. The results obtained open up new possibilities for varying the high-frequency properties of microwires and their application in modern sensorics.
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