Abstract
This paper studied the impact of silicon oxide layer on photovoltaic characteristic of iron-doped amorphous carbon film/silicon heterojunction (a-C:Fe/Si). The results show that a native SiO2 layer on the silicon surface can provide a significant improvement of the a-C:Fe/Si devices’ photovoltaic performances, especially for the short circuit current and fill factor. This improvement partly may be attributed to the electron recombination process is suppressed and the interface is modified by the SiO2 film based on the open circuit voltage decay measurement.
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