Abstract
The temperature dependence of the turn-on voltage of gold-doped MOSFETS made on high-resistivity silicon of both (110) and (111) orientations has been investigated. It has been shown that (110)-oriented silicon wafers yield MOS devices having lower fast interface trap densities and lower surface state charges than the (111)-oriented wafers. Gold has been shown to eliminate the fast interface traps and compensate for the surface state charge QSS by introducing acceptor interface states close to the valence band edge. This latter effect has been shown to be greater in (110)-oriented wafers than in (111), yielding very higly enhanced n-channel MOSFETS on high-resistivity materials.
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