Abstract
We describe the influence of electron irradiation (at 30 kV with a dose of up to 100 μC/cm 2) on the electrical characteristics of metal–insulator–semiconductor structures based on a high- k dielectric stack of HfTiSiO(N) and HfTiO(N). The capacitance–voltage ( C– V) and current–voltage characteristics were investigated after irradiation and compared to those of unirradiated samples. To better understand the irradiation effect, the capacitance–voltage ( C– V) and current–voltage characteristics were also characterized for structures which were stressed at constant voltages. The irradiation induces a parallel shift of the C– V curves towards negative bias due to the introduction of positive charges in the bulk dielectric and semiconductor–dielectric interface. Annealing at 300 °C restored the C– V characteristics to those of the untreated state. A small decrease of the dielectric constant, from 11.7 to 10.7, was observed after irradiation. No measurable change in leakage current due to irradiation was observed.
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