Abstract
The electrical homogeneity of the Si implanted layer in LEC-grown, semi-insulating GaAs was investigated by Hall measurements. Variations in electrical properties across the substrate were compared with dislocation density distribution. An M-shaped sheet resistance and a W-shape sheet carrier concentration variation across the substrate were closely correlated with a W-shaped dislocation density distribution. Almost uniform electrical properties, except for the wafer periphery, were verified for the substrate having a U-shaped dislocation density distribution.
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