Abstract
Influence of melt composition on uniformity of resistivity and mobility in semi-insulating, undoped GaAs grown by liquid encapsulated Czochralski technique was investigated in detail. Microscopic two-dimensional resistivity distribution was measured using the three-electrode guard method, and Hall mobility was measured by the van der Pauw method. Relatively uniform, four fold symmetric resistivity distribution was observed in crystals grown from stoichiometric or slightly As-rich melt, whereas very significant fluctuations in resistivity were found in crystals grown from Ga-rich or heavily As-rich melt. High and rekatively uniform mobility along both axial and radial directions is obtained at near stoichiometric melt compositions.
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