Abstract
Polysilicon films were deposited on the following four dielectric layers: 0.10 μm Si02, 0.10 μm Si3N4, 1.0 μm Si02 and a dual layer of 0.10 μm Si3N4 over 1.0 μm Si02. The films were doped with As or P and then annealed with a scanning CW-argon laser. The resulting sheet resistance at a given laser power depends upon both the dielectric material and its thickness. The threshold power, that causes complete melting of the polysilicon, is inversely proportional to the thermal resistance of the underlying dielectric layers. With certain laser parameters and substrate film combinations, excessive thermal stresses cause cracking of the polysilicon films. The laser annealing process is also influenced by the net optical reflectance of the polysilicon/ dielectric multilayer films.
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