Abstract
The small- and large-signal high-frequency characteristics of submicrometer HEMTs (high-electron-mobility transistors) are analyzed by taking into account parasitic effects such as parallel conduction, fringing capacitances, and substrate leakage. The dependence of large-signal properties on device physical parameters is reported. This includes device gate length, donor layer thickness and doping, and spacer thickness. Satisfactory agreement is shown to exist between theoretically and experimentally obtained device characteristics. >
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