Abstract

Submicron high electron mobility transistors (HEMTs) lattice-matched to InP with InGaAs/InP composite channel were fabricated. Temperature dependence of DC and RF characteristics of the HEMTs were studied in the temperature range from 20 to 100 /spl deg/C. It has been found that the DC and microwave characteristics of the composite channel HEMTs are insensitive to the temperature. In particular, an increase in the maximum frequency of oscillation (f/sub max/) was observed at elevated temperature. The InP HEMTs with an InGaAs/InP composite channel shown good thermal stability. The device may have great potential to be operated with a wide temperature range for microwave applications.

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