Abstract
The sink strength of Cu–Nb interfaces was investigated by measuring the steady-state vacancy concentration profile adjacent to Cu–Nb interfaces during 1.8 MeV Kr + irradiation. Broadening of dilute nanoscale Au tracer layers in Cu quantified position-dependent values for radiation-enhanced diffusivity and, accordingly, vacancy concentration. The measured vacancy profile corresponds to results calculated from a steady-state kinetic rate equation that assumes perfect sink efficiency at the Cu–Nb interface, indicating that it behaves like an ideal sink for vacancies in Cu.
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