Abstract

Threshold Voltage is an important parameter of Organic Field-Effect Transistors (OFETs), which depends on the flatband voltage of the metal-insulator-semiconductor (MOS) capacitor of the transistor, the doping concentration in the transistor channel, and other factors like trap density at the dielectric interface. While the influence of channel doping and traps have been studied in detail, the flatband voltage dependence is usually neglected. Here we explore the relationship between flatband voltage and threshold voltage by measuring the CV and transfer characteristics of OFETs processed in the same run with identical gate/gate dielectric stack and varying source-drain contacts and find that the threshold voltage follows trends in the flatband voltage closely.

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