Abstract
From photoelectric emission and contact potential difference measurements, it is concluded that the surface obtained by cleavage of gallium arsenide crystals in vacuum can be described by a very simple band model with practically no surface states in the energy gap. For such a surface the purely ionic adsorption model predicts an n +-type surface after cesium adsorption. However, the spectral distribution of photoelectric emission for cesiated surfaces indicates that in this case Fermi level stabilization occurs at about 0.44 eV from the valence band edge, which means that the surface is even p-type.
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