Abstract
Photoemission measurements on GaSb indicate no surface states in the band gap. Deposition of Cs to form a Schottky barrier on n-GaSb moves the Fermi level 0.55 eV and produces pinning within the band gap. Thus, for the first time, Schottky-barrier pinning without the presence of intrinsic surface states in the gap is directly demonstrated. (WDM)
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