Abstract
The influence of annealing in zinc vapor on the impurity-defect composition and the IR cathodoluminescence (CL) of ZnSe:Te plates diffusion-doped with iron is studied. Formation of precipitates on twin boundaries is found. It is shown that annealing of structures with surface iron concentrations exceeding 1 at % in zinc vapor leads to a significant increase in the IR CL intensity. It is found that interband luminescence in the regions with high iron concentrations is partially restored as a result of annealing.
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