Abstract
The copper grain growth, Rs (Square Resistance) and CMP (Chemical Mechanical Polishing) removal rate of copper film with self-anneal and high-temperature anneal (HTA) conditions were quantitatively studied. The Rs value decreased with the increase of big grain percentage. And CMP removal rate of self-anneal copper film became faster due to the growth of copper grain. After 72 hours of self-anneal, the main property of copper film became similar with the film under HTA condition.
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