Abstract
The deposition temperature for tungsten films used as interconnects on Si integrated circuits is found to strongly influence the subsequent chemical mechanical polishing (CMP) removal rate. Careful analysis of the films by orientation imaging microscopy showed a direct correlation between the chemical vapor deposition temperature and the area fraction of (114) vs. (110) oriented tungsten grains. The CMP removal rate decreased as the fraction of (114) oriented grains in the film increased. © 2002 The Electrochemical Society. All rights reserved.
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