The influence of an electric field on the auger recombination in semiconductors

Abstract

AbstractAuger recombination in semiconductors is sometimes affected by an electric field. Proceeding from Bloch electrons in such a field the transition probability in this case is calculated. The result shows that electric fields of the order of 103 V/cm or 105 V/cm enhance the recombination probability in III−V‐compounds remarkably; the first value holds for low temperatures (T ≈ 10 K), the second one for high temperatures (T ≈ 300 K).