Abstract
Direct current magnetron reactive sputtering was used to deposit Al-doped ZnO (AZO) thin films on BK7 glass substrates by using Zn–Al alloy target at room-temperature. Al contents of Zn–Al alloy target were changed and all AZO thin films were annealed at 773 K for 1 h. It can be found that all the AZO thin films were n-type semiconductor material, and have preferred orientation with the c-axis normal. The thermoelectric properties results show that the Seebeck coefficient of the AZO thin films with Al content of 4 wt% has higher Seebeck value of 64 μV/K in comparison with others. The electric conductivity and power factor of AZO thin films with Al content of 2 wt% have maximum values of that 5.30 × 104 S/m and 0.74 × 10−4 W/mK2, respectively.
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