Abstract
Memory effect in nitrogen based on experimental data of electrical breakdown time delay as a function of afterglow period in the presence of additional electrons has been investigated. The additional electrons were supplied as a result of extraction from the auxiliary electrode pair or nitrogen irradiation with the radioactive source of low activity. The results show that these electrons have an important role in the recombination of positive ions formed in mutual metastable molecules' collisions and collisions between metastable and highly vibrationally excited molecules in the early afterglow. As a consequence of the ion–electron recombination N(4S) atoms are formed which, as well as N(4S) atoms formed in previous discharge, have a significant influence on the memory effect in late afterglow. The presence of N(4S) atoms in the late afterglow is tracked by monitoring the secondary emission which they induce via catalytic recombination on the cathode of a nitrogen-filled tube. Also, it has been shown that the contribution of secondary electrons which originate from N(4S) atoms and Compton electrons when the radioactive source is and isn't present can be distinguished.
Published Version
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