The In–As–Sb phase diagram and LPE growth of InAsSb layers on InAs at extremely low temperatures

Abstract

A calculation of the In–As–Sb phase diagram in the low-temperature range 300–400°C has been made applying the rare simple solution model. By using the calculated data an extremely low temperature LPE was performed for growing InAs 1− x Sb x layers on InAs substrates at temperatures as low as 300°C. It was shown that high-quality layers can be grown on InAs with x up to 0.26. SEM microprobe compositional analysis and X-ray diffraction analysis confirmed their homogeneity and high crystal quality and the promise of this material for mid-infrared optoelectronic devices.