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Abstract
The all-solid-state electrochromic device (ECD) with the one substrate structure fabricated by the reactive dc magnetron sputtering (DCMS) and cathodic vacuum arc plasma (CVAP) technology has been developed for smart electrochromic (EC) glass application. The EC layer and ion conductor layer were deposited by reactive DCMS and CVAP technology, respectively. The ion conductor layer Ta2O5 deposited by the CVAP technology has provided the better porous material structure for ion transportation and showed 1.76 times ion conductivity than devices with all sputtering process. At the same time, the EC layer WO3 and NiO deposited by the reactive DCMS have also provided the high quality and uniform characteristic to overcome the surface roughness effect of the CVAP ion conductor layer in multilayer device structure. The all-solid-state ECD with the CVAP ion conductor layer has demonstrated a maximum transmittance variation (ΔT) of 55% at 550nm and a faster-switching speed. Furthermore, the lower equipment cost and higher deposition rate could be achieved by the application of CVAP technology.
Highlights
Over the past few decades, electrochromic devices (ECDs) have been attracted increasing attention because of their interesting characteristics such as high optical contrast ratio, low power consumption, optical memory effect, and high electrical stability
Reactive DCMS has the advantage in the preparation of aElectronic mail: MCWang@iner.gov.tw 2158-3226/2016/6(11)/115009/5
If a reactive gas is introduced during the process, dissociation, ionization, and excitation can occur during the interaction with the ion flux, and a compound film can be deposited from a mixed metal and gas plasma
Summary
Over the past few decades, electrochromic devices (ECDs) have been attracted increasing attention because of their interesting characteristics such as high optical contrast ratio, low power consumption, optical memory effect, and high electrical stability. The Ta2O5 solid-state ion conductor layer deposited by reactive DCMS using a mixture gas has been developed by Kazuki Tajima et al.[22] The best conductivity of 7.0 x 10-10 S/cm has been obtained.
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