The improved RF/stability and linearity performance of the ultrathin-body Gaussian-doped junctionless FinFET

Abstract

The Gaussian-doped junctionless FinFET (GD-JLFinFET) is investigated for radiofrequency (RF)/analog applications. The performance of the device is analyzed by computing the transconductance (gm), transconductance-to-drain current ratio (gm/Ids), cutoff frequency (fT), and maximum oscillation frequency (fmax). The stability factor (K) is analyzed based on the Y-parameters, and the linearity of the proposed device is studied based on the gm3, second-order voltage intercept point (VIP2), third-order voltage intercept point (VIP3), third-order intermodulation intercept point (IIP3), third-order intermodulation distortion (IMD3), and 1-dB compression point. The impact of device geometrical parameters such as the fin width, fin height, channel length, voltage biases, and temperature on the RF/stability characteristics is also studied. The proposed device exhibits fT = 2.96 THz and fmax = 9.13 THz, compared with the values of fT = 0.97 THz and fmax = 5.88 THz for the uniformly doped junctionless FinFET (UD-JLFinFET). It is observed that proposed device exhibits better RF/analog characteristics.