Abstract
A systematic capacitance-voltage (C-V) and time-dependent dielectric breakdown (TDDB) study on silicon carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) that use silicon dioxide (SiO2) is shown in this paper. Oxides were formed using atomic layer deposition (ALD), low-pressure chemical vapour deposition (LPCVD) or direct thermal growth in nitrous oxide (N2O) ambient, where both deposited oxides were post-deposition annealed in N2O ambient, too. The electrical characterisation results reveal that the ALD-deposited and N2O-annealed oxides show the best capacitance-voltage (C-V) characteristics, with flatband and hysteresis voltages (VFB) averaging 1.44 V and 0.41 V, respectively. When measuring the leakage current levels at 175°C, the ALD-deposited MOSCAPs’ breakdown electric fields are averaging similar to their counterparts at 9.71 MV/cm. MOSCAPs which utilized ALD-deposited SiO2 also showed 29% and 345% increased average injected charge-to 63% failure (QBD,63%) at 9 MV/cm and 9.6 MV/cm, respectively, when comparing these devices to their direct thermally grown SiO2 counterparts.
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