Abstract
physica status solidi (a)Volume 119, Issue 2 p. K103-K105 Short Note The Importance of Self–Interstitials to the Defect Formation in Silicon During Quenching J. Reichel, J. Reichel VEB Spurenmetalle Freiberg, WIB im Kombinat Mikroelektronik Search for more papers by this authorM. Reiche, M. Reiche Institut für Festkörperphysik und Elektronenmikroskopie der Akademie der Wissenschaften der DDR, Halle (Saale) Search for more papers by this author J. Reichel, J. Reichel VEB Spurenmetalle Freiberg, WIB im Kombinat Mikroelektronik Search for more papers by this authorM. Reiche, M. Reiche Institut für Festkörperphysik und Elektronenmikroskopie der Akademie der Wissenschaften der DDR, Halle (Saale) Search for more papers by this author First published: 16 June 1990 https://doi.org/10.1002/pssa.2211190238Citations: 1 PSF 211, DDR-9200 Freiberg, GDR. Weinberg 2, DDR-4050 Halle (Saale), GDR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Citing Literature Volume119, Issue216 June 1990Pages K103-K105 RelatedInformation
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