Abstract
The role of moisture in atomic-layer-deposited (ALD) and dielectrics on equivalent oxide thickness (EOT) scaling is investigated in gate-first devices with physical-vapor-deposited TaN gates. By reducing the amount of present in the gate stack, the EOT increase during high-temperature spike annealing is reduced from . This was achieved by a premetallization degas at for . The origin of this improvement lies in the elimination of -related reoxidation of the interfacial . By means of temperature-programmed desorption measurements, it is found that the majority of the is desorbed between 200 and with activation energies between and . Furthermore, the concentration is dependent on the Hf concentration and nitridation. Non-nitrided with adsorbs twice as much as . Correspondingly, a significantly larger EOT increase is observed for with as compared to . In HfSiON, the desorbed concentration is independent of [Hf]. Finally, a strong metal dependency on the EOT regrowth is observed. With ALD TiN, the EOT increase after thermal treatment is found to be independent of the degas condition at .
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