The importance of gap states for energy level alignment at hybrid interfaces

Abstract

Energy level alignment and electronic structure at organic semiconductor interfaces must be controlled to ensure efficient carrier harvesting or injection in next-generation organic optoelectronic technologies. In this context, hybrid organic/inorganic semiconductor interfaces exhibit particularly rich physics. Here, we show that states in the band gap of the inorganic layered van der Waals dichalcogenide SnS2 play an important role in determining energy level alignment at the hybrid interface with copper phthalocyanine (CuPc). By taking advantage of the closely related CuPc film growth on SnS2 and the well-studied interface of CuPc/HOPG, we are able to trace spectroscopic differences to the fundamentally different electronic interactions across the two interfaces. We provide a detailed picture of the role of gap states at the hybrid interface and shed light on the electronic properties of inorganic semiconductors in general and metal dichalcogenides in particular.