Abstract
Magnetoconductivity measurements on n-GaAs, doped close to the metal - insulator transition (MIT), are interpreted by a weak localization model including electron - electron interaction corrections. Measurements are analysed in the temperature range 0.3 - 18 K and for magnetic fields up to 1.5 T. Analysis of the data shows that current theories elaborated for high values of the disorder parameter continue to be applicable in the immediate vicinity of the MIT over a wide range of temperature and magnetic field. The inelastic scattering time is found to vary like . Nevertheless, it has been necessary to study the relative magnitude of the different contributions to electron interactions, which are shown to partially explain the surprising values of the interaction constants.
Published Version
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