The impacts of surface conditions on the vapor-liquid-solid growth of germanium nanowires on Si (100) substrate

Abstract

The impacts of surface conditions on the growth of Ge nanowires on a Si (100) substrate are discussed in detail. On SiO2-terminated Si substrates, high-density Ge nanowires can be easily grown. However, on H-terminated Si substrates, growing Ge nanowires is more complex. The silicon migration and the formation of a native SiO2 overlayer on a catalyst surface retard the growth of Ge nanowires. After removing this overlayer in the HF solution, high-density and well-ordered Ge nanowires are grown. Ge nanowires cross vertically and form two sets of parallel nanowires. It is found that nanowires grew along ⟨110⟩ directions.