Abstract
Wafers obtained from undoped, semi-insulating GaAs crystals grown by liquid-encapsulated Czochralski and vertical gradient freeze techniques were implanted with 29Si at a dose of 3×1012 ions/cm2 and an energy of 60 keV. Activation of the implanted region was carried out by furnace or rapid thermal annealing methods, with and without the use of an SiO2 encapsulant. Profiles of the electron concentration and distribution were obtained by the capacitance-voltage method. Significant variations in the donor distributions were found to be dependent upon the annealing technique employed. The dissimilarities in implant activation properties for GaAs wafers grown by the two techniques, and subjected to identical annealing cycles, have been attributed to variations in melt stoichiometry and native point defects.
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