The Impact of the Gate Oxide Thickness Reduction on the Gate Induced Floating Body Effect in SOI nMOSFETs

Abstract

This work presents the influence of the gate oxide thickness (toxf) reduction on the gate induced floating body effects (GIFBE) in different Silicon On Insulator (SOI) technologies, through experimental results and two-dimensional numerical simulations. The occurrence of the floating body effect displacement and the threshold variation with toxf reduction are investigated. The continuous reduction of toxf suggests that the first and second transconductance peaks tend to overlap each other.