The impact of self-assembled monolayer thickness in hybrid gate dielectrics for organic thin-film transistors

Abstract

We have investigated the electrical characteristics of hybrid dielectrics with a thickness of 6 nm or less that are composed of a plasma-grown aluminum oxide (AlO x ) layer and a self-assembled monolayer (SAM) of an aliphatic phosphonic acid. The impact of the quality of the AlO x layer on the insulating properties of the double-layer dielectrics was assessed by comparing two different oxidation procedures, and the influence of the thickness of the organic SAM was evaluated by employing molecules with five different chain lengths. In order to decouple the relative contributions of the oxide and the SAM to the performance of the double-layer dielectrics we have also performed cyclic voltammetry measurements on indium tin oxide (ITO)/SAM devices without AlO x layer. Finally, we have evaluated how the quality of the AlO x layer and the thickness of the SAM affect the performance of low-voltage organic thin-film transistors (TFTs) that employ the thin AlO x /SAM dielectrics as the gate dielectric. The results confirm the important role of the SAM in determining the breakdown voltage, in limiting the current density, and in compensating the somewhat lower quality of AlO x layers produced under mild plasma conditions.