Abstract
AbstractFactors responsible for the onset of dislocation generation in the fields of localized high stresses have been studied in LOCOS-isolated test structures by means of preferential etching, junction leakage analysis, and computer simulation. A strong correlation between densities of stacking faults and dislocations was observed in the experiments. Defect distributions also correlated to leakage currents. 2D simulations of stresses, interstitial injection, and stacking fault growth during field oxidation showed that maximum resolved shear stress in the structures did not exceed the critical level for dislocation generation and that the agglomeration of silicon interstitial atoms did not play a notable role in dislocation nucleation. Dislocation and stacking fault formation was attributed to surface mechanical damage introduced during plasma processing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
