Abstract
Dislocation generation in silicon at ion implants in complementary metal oxide semiconductor (CMOS) devices has been studied by using transmission X-ray topography. The dislocations are shown to arise through the interaction between relatively low level thermomechanical stresses and ion implantation damage during processing. These observations are compared with the more common situation of dislocation generation via purely thermomechanical effects. The results provide an illustration of the importance of interactions between the various sources of stress and damage which occur during device processing. Furthermore, they demonstrate that substantial defect generation can occur even when such stresses are controlled at levels which are individually below the threshold for dislocation generation.
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