Abstract
The impact of oxide precipitates (OPs) on the p–n junction leakage currentdensity for reverse voltage is studied for the case of oxygen precipitation in siliconin the form of oxide platelets, typical for 650–1000°C treatment. A method isproposed which takes into account the precipitate morphology and the oxidestoichiometry for the extraction of leakage densities related to various parts of thedefect structure, namely to: (i) the platelet planes, (ii) the sidewalls ofplatelets, and (iii) the dislocations formed as secondary defects. It is alsoshown that the impact of platelet OPs on junction leakage is expected tobe dependent on the isolation scheme used for junction manufacturing.
Published Version
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