The Impact of P-Type Layer on Performance and Stability of Thin Film Silicon Solar Cells in Relation to Third Generation: A review Analysis

Abstract

Thin-film Silicon (Si) Solar Cells (SCs) have emerged as a promising candidate for next-generation photovoltaic devices due to their potential for cost-effectiveness and versatility. However, achieving high efficiency and long-term stability remains a significant challenge in their development. The primary challenges with thin-film Si SCs have been the poor infrared light absorption of Hydrogenated Microcrystalline Silicon (c-Si: H) and the light-induced metastability of Hydrogenated Amorphous Silicon (a-Si: H). This study reviewed the influence of the p-type layer, a key component in thin-film Si SCs, on both performance and stability. Third generation SCs are optimized for high Power Conversion Efficiency (PCE) at low manufacturing costs. According to the review of the comparison analysis, Patel K. et al., (2021) obtained the highest PCE of 30.17% with the a-Si/MoTe2 material (Photocurrent Density Jsc = 32.41mA/cm2, An Open-Circuit Voltage Voc = 1.093V, and Fill Factor (FF) = 85.12%) of the state-of-the-art previous works. The findings presented here contribute valuable insights toward the development of efficient and durable SC technology, crucial for advancing the adoption of renewable energy sources in our ever-growing energy demand.