Abstract
Thin-film Silicon (Si) Solar Cells (SCs) have emerged as a promising candidate for next-generation photovoltaic devices due to their potential for cost-effectiveness and versatility. However, achieving high efficiency and long-term stability remains a significant challenge in their development. The primary challenges with thin-film Si SCs have been the poor infrared light absorption of Hydrogenated Microcrystalline Silicon (c-Si: H) and the light-induced metastability of Hydrogenated Amorphous Silicon (a-Si: H). This study reviewed the influence of the p-type layer, a key component in thin-film Si SCs, on both performance and stability. Third generation SCs are optimized for high Power Conversion Efficiency (PCE) at low manufacturing costs. According to the review of the comparison analysis, Patel K. et al., (2021) obtained the highest PCE of 30.17% with the a-Si/MoTe2 material (Photocurrent Density Jsc = 32.41mA/cm2, An Open-Circuit Voltage Voc = 1.093V, and Fill Factor (FF) = 85.12%) of the state-of-the-art previous works. The findings presented here contribute valuable insights toward the development of efficient and durable SC technology, crucial for advancing the adoption of renewable energy sources in our ever-growing energy demand.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: International Journal of Scientific Research in Modern Science and Technology
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.